FDN361AN datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* 1.8 A, 30 V. RDS(on) = 0.100 Ω
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* @ VGS = 10 V RDS(on) = 0.150 Ω @ VGS = 4.5 V. Low gate charge ( 2.1nC typical ). Fast switching speed. High perform.

Application

* DC/DC converter
* Load switch
* Motor drives
* D D S SuperSOT -3 TM G TA=25 C unless otherwise not.

Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features

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